N-channel MOSFET, 60V drain-source breakdown voltage, 85mΩ maximum drain-source resistance, and 4.4A continuous drain current. Features a 1.5V threshold voltage, 370pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 175°C with a 3W maximum power dissipation. Surface mountable in a SOT-23-3 package, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Vishay SQ2360EES-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
370pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
10ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQ2360EES-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ2360EES-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
