P-channel MOSFET, surface mount, SOT-23-3 package. Features -60V drain-to-source voltage, -2.5A continuous drain current, and 115mΩ drain-to-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 2W. Includes 7ns turn-on delay, 8ns fall time, and 19ns turn-off delay. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQ2361EES-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-2.5A
Drain to Source Resistance
115mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
545pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-2.5V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
150mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.5V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQ2361EES-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ2361EES-T1-GE3 to view detailed technical specifications.
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