P-channel MOSFET, surface mount, SOT-23-3 package. Features -60V drain-to-source voltage, -2.5A continuous drain current, and 115mΩ drain-to-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 2W. Includes 7ns turn-on delay, 8ns fall time, and 19ns turn-off delay. RoHS compliant.
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Vishay SQ2361EES-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -2.5A |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 545pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -2.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| RoHS | Compliant |
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