N-channel silicon JFET with a 4.3A drain current and 60V breakdown voltage. This single-element field-effect transistor features a TO-236AB package with 3 terminals, arranged in a dual configuration. The device is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Vishay SQ2362ES-T1_GE3 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Vishay SQ2362ES-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQ2362ES-T1_GE3 to view detailed technical specifications.
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