P-channel, single-element, silicon MOSFET designed for small signal applications. Features a continuous drain current of -17.3A and a drain-to-source voltage of -40V. Offers a low drain-to-source resistance of 11mΩ at a nominal gate-to-source voltage of -2V. Operates within a temperature range of -55°C to 175°C, with a maximum power dissipation of 7.14W. Packaged in an SOIC-8 surface-mount package, this component is HALOGEN FREE and ROHS COMPLIANT.
Vishay SQ4401EY-T1_GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | -17.3A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 4.25nF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.14W |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 14mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 58ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
