N-channel MOSFET, 60V Vdss, 16A continuous drain current, and 12mR Rds On resistance. Features a low 3V threshold voltage and 3V nominal Vgs, with fast switching speeds including 9ns fall time, 13ns turn-on delay, and 25ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 7.1W. Packaged in an 8-pin SOIC surface-mount package, ideal for high-efficiency power applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQ4470EY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.165nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.1W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ4470EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ4470EY-T1-GE3 to view detailed technical specifications.
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