N-channel MOSFET, 60V Vdss, 16A continuous drain current, and 12mR Rds On resistance. Features a low 3V threshold voltage and 3V nominal Vgs, with fast switching speeds including 9ns fall time, 13ns turn-on delay, and 25ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 7.1W. Packaged in an 8-pin SOIC surface-mount package, ideal for high-efficiency power applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQ4470EY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
16A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
60V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.165nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.1W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
12mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQ4470EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ4470EY-T1-GE3 to view detailed technical specifications.
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