N-Channel Power MOSFET, featuring a 60V Drain-to-Source Voltage (Vdss) and 3.7A Continuous Drain Current (ID). This surface-mount device offers low 80mR Drain-to-Source Resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. With fast switching characteristics including a 9ns turn-on delay and 10ns fall time, it is ideal for power management applications. The component is housed in a compact SO package, measuring 5mm in length, 4mm in width, and 1.55mm in height, with a maximum power dissipation of 1.7W.
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| Package/Case | SO |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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