Dual N-Channel MOSFET, TrenchFET® series, offering 60V drain-source voltage and 5.4A continuous drain current. Features low 64mΩ drain-source on-resistance at 10V gate-source voltage. Operates from -55°C to 175°C with a 4W maximum power dissipation. Surface mountable in an SO package, ideal for high-efficiency switching applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQ9945BEY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 64mR |
| Fall Time | 1.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 64mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ9945BEY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ9945BEY-T1-GE3 to view detailed technical specifications.
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