N-channel power MOSFET featuring 150V drain-source voltage and 25A continuous drain current. Surface mountable in a TO-252 package, this silicon metal-oxide semiconductor FET offers a low 52mΩ drain-to-source resistance. Operating across a wide temperature range of -55°C to 175°C, it supports a maximum power dissipation of 107W. The component is halogen-free and RoHS compliant.
Vishay SQD25N15-52_GE3 technical specifications.
| Package/Case | TO-252-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.2nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
