N-channel MOSFET, 55V drain-source voltage, 30A continuous drain current, and 20mΩ drain-source resistance. Features a TO-252-3 surface mount package, 50W maximum power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with 5ns turn-on delay, 20ns turn-off delay, and 100ns fall time. RoHS compliant and packaged in tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQD35N05-26L-GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.175nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD35N05-26L-GE3 Datasheet
Download the complete datasheet for Vishay SQD35N05-26L-GE3 to view detailed technical specifications.
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