N-channel MOSFET, 55V drain-source voltage, 30A continuous drain current, and 20mΩ drain-source resistance. Features a TO-252-3 surface mount package, 50W maximum power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with 5ns turn-on delay, 20ns turn-off delay, and 100ns fall time. RoHS compliant and packaged in tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQD35N05-26L-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
55V
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.175nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
20mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
5ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SQD35N05-26L-GE3 Datasheet
Download the complete datasheet for Vishay SQD35N05-26L-GE3 to view detailed technical specifications.
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