P-channel power MOSFET featuring 100V drain-source voltage and 38A continuous drain current. Offers a low on-resistance of 0.04 ohms, enabling efficient power switching. This single-element silicon Metal-oxide Semiconductor FET is housed in a TO-252 package, compliant with HALOGEN FREE and ROHS standards. Designed with a single terminal position and two terminals.
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Technical Specifications
Vishay SQD40P10-40L_GE3 technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Vishay SQD40P10-40L_GE3 Datasheet
Download the complete datasheet for Vishay SQD40P10-40L_GE3 to view detailed technical specifications.
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