N-channel power MOSFET for general-purpose applications. Features 30V drain-source breakdown voltage and 50A continuous drain current. Offers low 9mΩ drain-source resistance at 10Vgs. Surface-mount DPAK package with 71W maximum power dissipation. Operates from -55°C to 175°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
Vishay SQD50N03-09-GE3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.885nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
71W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
8.3W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQD50N03-09-GE3 Datasheet
Download the complete datasheet for Vishay SQD50N03-09-GE3 to view detailed technical specifications.
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