N-channel power MOSFET for general-purpose applications. Features 30V drain-source breakdown voltage and 50A continuous drain current. Offers low 9mΩ drain-source resistance at 10Vgs. Surface-mount DPAK package with 71W maximum power dissipation. Operates from -55°C to 175°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
Vishay SQD50N03-09-GE3 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.885nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD50N03-09-GE3 Datasheet
Download the complete datasheet for Vishay SQD50N03-09-GE3 to view detailed technical specifications.
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