Vishay
SQJ401EP-T1_GE3
Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
MountingSurface Mount
Power83W
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Technical Specifications
Vishay SQJ401EP-T1_GE3 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Fall Time | 166ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 263ns |
| Turn-On Delay Time | 43ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ401EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ401EP-T1_GE3 to view detailed technical specifications.
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