P-channel MOSFET featuring 200V drain-source voltage and 12A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.221ohm. Designed with a 4-terminal configuration, it is housed in a leadless POWERPAK SO-8L package. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Vishay SQJ431EP-T1_GE3 technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Vishay SQJ431EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ431EP-T1_GE3 to view detailed technical specifications.
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