P-channel MOSFET featuring 200V drain-source voltage and 12A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.221ohm. Designed with a 4-terminal configuration, it is housed in a leadless POWERPAK SO-8L package. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Vishay SQJ431EP-T1_GE3 technical specifications.
General
Number of Terminals
4
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Vishay SQJ431EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ431EP-T1_GE3 to view detailed technical specifications.
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