N-channel MOSFET transistor designed for automotive applications. Features a continuous drain current of 32A and a drain-to-source voltage of 100V. Offers a low on-resistance of 26mΩ at a nominal gate-source voltage of 3V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 83W. This surface-mount component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQJ456EP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.342nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ456EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ456EP-T1-GE3 to view detailed technical specifications.
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