P-Channel Power MOSFET featuring 80V drain-source voltage and 32A continuous drain current. Offers low 25mΩ drain-to-source resistance for efficient power handling. Designed for surface mount applications with a maximum power dissipation of 100W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 40ns. This silicon, metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT, packaged in a POWERPAK, SO-8L, 4-pin configuration.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQJ469EP-T1_GE3 technical specifications.
General
Continuous Drain Current (ID)
-32A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-80V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
-2V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
150ns
Turn-On Delay Time
16ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ469EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ469EP-T1_GE3 to view detailed technical specifications.
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