Automotive N-Channel MOSFET, 30V Vdss, 8A continuous drain current, and 48W max power dissipation. Features low 24mR drain-to-source resistance and 1.15nF input capacitance. Operates across a wide temperature range from -55°C to 175°C. Packaged in SO for surface mounting, supplied on tape and reel. RoHS compliant.
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Vishay SQJ844EP-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.15nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
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