Automotive N-Channel MOSFET, 30V Vdss, 8A continuous drain current, and 48W max power dissipation. Features low 24mR drain-to-source resistance and 1.15nF input capacitance. Operates across a wide temperature range from -55°C to 175°C. Packaged in SO for surface mounting, supplied on tape and reel. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQJ844EP-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.15nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
27ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ844EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ844EP-T1-GE3 to view detailed technical specifications.
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