N-channel power MOSFET featuring 40V drain-source voltage and 58A continuous drain current. Offers a low 6.3mΩ drain-to-source resistance. Designed for surface mounting with a POWERPAK SO-8L package. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 48W. This silicon metal-oxide semiconductor FET is halogen-free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQJ858AEP-T1_GE3 technical specifications.
General
| Continuous Drain Current (ID) | 58A |
| Drain to Source Resistance | 6.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ858AEP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ858AEP-T1_GE3 to view detailed technical specifications.
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