P-channel Power MOSFET, 30V Drain-Source Voltage, 8A Continuous Drain Current. Features TrenchFET process technology for low on-resistance (24 mOhm at 10V). Dual configuration with 8 pins in a surface-mount PowerPAK SO package (4.9mm x 5.89mm x 1.07mm). Operating temperature range from -55°C to 175°C.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay SQJ941EP-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
PowerPAK SO
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.89
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Process Technology
TrenchFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
8A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
24@10VmOhm
Typical Gate Charge @ Vgs
35@10VnC
Typical Gate Charge @ 10V
35nC
Typical Input Capacitance @ Vds
1500@10VpF
Maximum Power Dissipation
55000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SQJ941EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ941EP-T1-GE3 to view detailed technical specifications.
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