Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Vishay SQJ963EP-T1_GE3 technical specifications.
| Continuous Drain Current (ID) | -8A |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SQ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
No datasheet is available for this part.
