N-Channel MOSFET with 60V drain-source breakdown voltage and 8A continuous drain current. Features low 28mΩ Rds(on) and 3.8V threshold voltage. Operates from -55°C to 175°C with a maximum power dissipation of 35W. Surface mountable in a 5-pin PowerPAK SO package, supplied on tape and reel.
Vishay SQJ964EP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Nominal Vgs | 3.8V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3.8V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
No datasheet is available for this part.
