N-Channel MOSFET with 40V drain-source breakdown voltage and 8A continuous drain current. Features low 20mΩ drain-source resistance and 48W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Designed for surface mounting with tape and reel packaging. Includes 2 N-Channel FETs with a nominal gate-source voltage of 2V.
MountingSurface Mount
PolarityN-CHANNEL
Power48W
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Technical Specifications
Vishay SQJ970EP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.165nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ970EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ970EP-T1-GE3 to view detailed technical specifications.
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