N-Channel MOSFET with 40V drain-source breakdown voltage and 8A continuous drain current. Features low 20mΩ drain-source resistance and 48W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Designed for surface mounting with tape and reel packaging. Includes 2 N-Channel FETs with a nominal gate-source voltage of 2V.
MountingSurface Mount
PolarityN-CHANNEL
Power48W
Quick Jump:
Technical Specifications
Vishay SQJ970EP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.165nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ970EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ970EP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
