Power Field-Effect Transistor, 25A I(D), 60V, 0.013ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Vishay SQJB00EP-T1_GE3 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
