P-channel MOSFET featuring 100V drain-source voltage and 93A continuous drain current. This silicon power transistor offers a low on-resistance of 0.019 ohms. Designed with a single element and housed in a TO-263AB package, it operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Vishay SQM100P10-19L_GE3 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Vishay SQM100P10-19L_GE3 Datasheet
Download the complete datasheet for Vishay SQM100P10-19L_GE3 to view detailed technical specifications.
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