P-channel MOSFET featuring 100V drain-source voltage and 93A continuous drain current. This silicon power transistor offers a low on-resistance of 0.019 ohms. Designed with a single element and housed in a TO-263AB package, it operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Vishay SQM100P10-19L_GE3 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay SQM100P10-19L_GE3 Datasheet
Download the complete datasheet for Vishay SQM100P10-19L_GE3 to view detailed technical specifications.
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