Vishay
SQM110N10-09-GE3
TRANSISTOR 120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
TRANSISTOR 120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Vishay SQM110N10-09-GE3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.645nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM110N10-09-GE3 Datasheet
Download the complete datasheet for Vishay SQM110N10-09-GE3 to view detailed technical specifications.
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