Vishay
SQM110N10-09-GE3
TRANSISTOR 120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Vishay SQM110N10-09-GE3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
120A
Drain to Source Voltage (Vdss)
100V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.645nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
9.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
52ns
Turn-On Delay Time
21ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQM110N10-09-GE3 Datasheet
Download the complete datasheet for Vishay SQM110N10-09-GE3 to view detailed technical specifications.
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