Vishay
SQM120N10-3M8_GE3
Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Technical Specifications
Vishay SQM120N10-3M8_GE3 technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Vishay SQM120N10-3M8_GE3 Datasheet
Download the complete datasheet for Vishay SQM120N10-3M8_GE3 to view detailed technical specifications.
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