N-channel MOSFET transistor featuring a 40V drain-source voltage and 200A continuous drain current. Offers a low 1.7mΩ drain-source resistance at a 10V gate-source voltage. Designed for surface mounting in a TO-263-7 package, this component boasts a maximum power dissipation of 375W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 16ns fall time, 22ns turn-on delay, and 70ns turn-off delay.
PackageTO-263-7
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM200N04-1M7L-GE3 technical specifications.
General
Package/Case
TO-263-7
Continuous Drain Current (ID)
200A
Drain to Source Resistance
1.7mR
Drain to Source Voltage (Vdss)
40V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
11.168nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.7mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
70ns
Turn-On Delay Time
22ns
Weight
0.056438oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQM200N04-1M7L-GE3 Datasheet
Download the complete datasheet for Vishay SQM200N04-1M7L-GE3 to view detailed technical specifications.
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