N-channel MOSFET transistor featuring a 40V drain-source voltage and 200A continuous drain current. Offers a low 1.7mΩ drain-source resistance at a 10V gate-source voltage. Designed for surface mounting in a TO-263-7 package, this component boasts a maximum power dissipation of 375W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 16ns fall time, 22ns turn-on delay, and 70ns turn-off delay.
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Vishay SQM200N04-1M7L-GE3 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11.168nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.056438oz |
| RoHS | Compliant |
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