Vishay
SQS415ENW-T1_GE3
Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Technical Specifications
Vishay SQS415ENW-T1_GE3 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay SQS415ENW-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQS415ENW-T1_GE3 to view detailed technical specifications.
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