Vishay
SQS415ENW-T1_GE3
Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Technical Specifications
Vishay SQS415ENW-T1_GE3 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Vishay SQS415ENW-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQS415ENW-T1_GE3 to view detailed technical specifications.
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