N-Channel Power MOSFET featuring 80V drain-source voltage and 18A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.027 ohms. Designed with 5 terminals and dual terminal positioning, it operates across a wide temperature range from -55°C.
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Technical Specifications
Vishay SQSA80ENW-T1_GE3 technical specifications.
General
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Vishay SQSA80ENW-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQSA80ENW-T1_GE3 to view detailed technical specifications.
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