N-Channel Power MOSFET featuring 80V drain-source voltage and 18A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.027 ohms. Designed with 5 terminals and dual terminal positioning, it operates across a wide temperature range from -55°C.
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| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
These are design resources that include the Vishay SQSA80ENW-T1_GE3
A design document for a 2.4W DCM flyback converter using the MAX17596, providing 24V at 100mA from a 19V-29V DC input with 87.8% efficiency.
