TRANSISTOR, JFET, N-Channel, 200uA, TO-236; Transistor Type: JFET; Breakdown Voltage
Vishay SST4119-E3 technical specifications.
| Package/Case | TO-236 |
| Continuous Drain Current (ID) | 200uA |
| Gate to Source Voltage (Vgs) | -40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Can |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
