
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236, LEAD FREE, TO-236, 3 PIN
Vishay SSTJ211-T1-E3 technical specifications.
| Package/Case | TO-236 |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Vishay SSTJ211-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.