N-channel power MOSFET, surface mountable in a TO-252 package. Features 150V drain-source breakdown voltage, 15A continuous drain current, and a maximum drain-source on-resistance of 95mΩ. Operates with a nominal gate-source voltage of 2V and a maximum of 20V. Offers fast switching with turn-on delay of 8ns and fall time of 30ns. Maximum power dissipation is 2.7W, with an operating temperature range of -55°C to 175°C.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Vishay SUD15N15-95-E3 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
92mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
95mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.7W
Radiation Hardening
No
Rds On Max
95mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD15N15-95-E3 Datasheet
Download the complete datasheet for Vishay SUD15N15-95-E3 to view detailed technical specifications.
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