N-channel power MOSFET, 200V drain-source voltage, 19A continuous drain current, and 90mΩ drain-source resistance. Features a TO-252-3 (DPAK) surface-mount package, 136W maximum power dissipation, and 175°C maximum operating temperature. Ideal for high-efficiency switching applications with fast switching speeds, including 15ns turn-on delay and 30ns turn-off delay. RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD19N20-90-T4-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
19A
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
200V
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.8nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
90mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD19N20-90-T4-E3 Datasheet
Download the complete datasheet for Vishay SUD19N20-90-T4-E3 to view detailed technical specifications.
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