Vishay
SUD20N10-66L-GE3
Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Vishay SUD20N10-66L-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
16.9A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
860pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
41.7W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
66mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SUD20N10-66L-GE3 Datasheet
Download the complete datasheet for Vishay SUD20N10-66L-GE3 to view detailed technical specifications.
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