N-Channel Power MOSFET, 60V Drain-Source Voltage, 9.1A Continuous Drain Current, and 31mΩ Max Drain-Source On-Resistance. Features a 3V Threshold Voltage, 670pF Input Capacitance, and 31.25W Max Power Dissipation. This surface-mount device is packaged in a DPAK (TO-252) with dimensions of 6.73mm (L) x 6.22mm (W) x 2.39mm (H). Operating temperature range is -55°C to 150°C. RoHS compliant and halogen-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power5.7W
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Technical Specifications
Vishay SUD23N06-31-GE3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
9.1A
Drain to Source Resistance
31mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
31mR
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
670pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
31.25W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5.7W
Radiation Hardening
No
Rds On Max
31mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
35ns
Turn-On Delay Time
18ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD23N06-31-GE3 Datasheet
Download the complete datasheet for Vishay SUD23N06-31-GE3 to view detailed technical specifications.
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