N-Channel Power MOSFET, 35A continuous drain current, 55V drain-source breakdown voltage, and 20mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 50W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include 885pF input capacitance, 1V threshold voltage, and fast switching times with a 5ns turn-on delay. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power50W
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Technical Specifications
Vishay SUD35N05-26L-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
20mR
Dual Supply Voltage
55V
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
0.094inch
Input Capacitance
885pF
Lead Free
Lead Free
Length
0.264inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
20ns
Turn-On Delay Time
5ns
DC Rated Voltage
55V
Width
0.245inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUD35N05-26L-E3 Datasheet
Download the complete datasheet for Vishay SUD35N05-26L-E3 to view detailed technical specifications.
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