SUD35N05-26L-E3

N-Channel Power MOSFET, 35A continuous drain current, 55V drain-source breakdown voltage, and 20mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 50W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include 885pF input capacitance, 1V threshold voltage, and fast switching times with a 5ns turn-on delay. RoHS compliant and lead-free.