N-channel power MOSFET featuring 80V drain-source breakdown voltage and 40A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 16mΩ drain-source resistance. Designed for efficient switching, it exhibits a 12ns turn-on delay and 10ns fall time. The component is housed in a TO-252 package, operating across a wide temperature range from -55°C to 175°C.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 80V |
| Dual Supply Voltage | 80V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Series | SUD |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01164oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
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