N-channel power MOSFET featuring 80V drain-source breakdown voltage and 40A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 16mΩ drain-source resistance. Designed for efficient switching, it exhibits a 12ns turn-on delay and 10ns fall time. The component is housed in a TO-252 package, operating across a wide temperature range from -55°C to 175°C.
PackageTO-252-3
PolarityN-CHANNEL
Power100W
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Technical Specifications
Vishay SUD40N08-16 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
80V
Dual Supply Voltage
80V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Nominal Vgs
4V
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Series
SUD
Turn-Off Delay Time
25ns
Turn-On Delay Time
12ns
Weight
0.01164oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUD40N08-16 Datasheet
Download the complete datasheet for Vishay SUD40N08-16 to view detailed technical specifications.
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