P-channel Power MOSFET, single element, enhancement mode, featuring 30V drain-source voltage and 45A continuous drain current. Surface-mount DPAK package (TO-252AA) with gull-wing leads, measuring 6.73mm max length and 6.22mm max width. Offers 8.7mOhm max drain-source resistance at 10V Vgs and 2100mW power dissipation. Operates from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SUD45P03-09-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.38(Max)
Seated Plane Height (mm)
2.51(Max)
Pin Pitch (mm)
2.28
Package Weight (g)
0.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Maximum Drain Source Resistance
8.7@10VmOhm
Typical Gate Charge @ Vgs
60@10VnC
Typical Gate Charge @ 10V
60nC
Typical Input Capacitance @ Vds
2700@15VpF
Maximum Power Dissipation
2100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SUD45P03-09-GE3 Datasheet
Download the complete datasheet for Vishay SUD45P03-09-GE3 to view detailed technical specifications.
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