P-Channel MOSFET transistor in a TO-252 package, featuring a continuous drain current of 15A and a low drain-to-source resistance of 10mR. This component operates with a drain-to-source voltage of -30V and a gate-to-source voltage up to 20V. It offers fast switching characteristics with a turn-on delay of 15ns and a fall time of 140ns. Maximum power dissipation is rated at 4W, with an operating temperature range from -55°C to 150°C.
PackageTO-252
Resistance100mR
PolarityP-CHANNEL
Power4W
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Technical Specifications
Vishay SUD45P03-10 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
15A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
-30V
Dual Supply Voltage
-30V
Fall Time
140ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4W
Nominal Vgs
-1V
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
4W
Reach SVHC Compliant
No
Resistance
100mR
RoHS Compliant
No
Series
SUD
Termination
SMD/SMT
Turn-Off Delay Time
100ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUD45P03-10 Datasheet
Download the complete datasheet for Vishay SUD45P03-10 to view detailed technical specifications.
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