P-Channel MOSFET transistor in a TO-252 package, featuring a continuous drain current of 15A and a low drain-to-source resistance of 10mR. This component operates with a drain-to-source voltage of -30V and a gate-to-source voltage up to 20V. It offers fast switching characteristics with a turn-on delay of 15ns and a fall time of 140ns. Maximum power dissipation is rated at 4W, with an operating temperature range from -55°C to 150°C.
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| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | -30V |
| Dual Supply Voltage | -30V |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4W |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 4W |
| Reach SVHC Compliant | No |
| Resistance | 100mR |
| RoHS Compliant | No |
| Series | SUD |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
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