P-channel power MOSFET featuring 30V drain-source voltage and 15A continuous drain current. Offers a low 10mΩ drain-source on-resistance. This component is designed for general-purpose power applications, packaged in a DPAK (TO-252) surface-mount package. Key specifications include a maximum power dissipation of 70W and a gate-source voltage rating of 20V. Operating temperature range spans from -55°C to 150°C.
PackageDPAK
MountingThrough Hole, Surface Mount
PolarityP-CHANNEL
Power4W
Quick Jump:
Technical Specifications
Vishay SUD45P03-10-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
15A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
10mR
Dual Supply Voltage
-30V
Fall Time
140ns
Gate to Source Voltage (Vgs)
20V
Height
2.38mm
Input Capacitance
6nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole, Surface Mount
Nominal Vgs
-1V
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
4W
Rds On Max
10mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-3V
Turn-Off Delay Time
100ns
Turn-On Delay Time
15ns
Width
6.8mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD45P03-10-E3 Datasheet
Download the complete datasheet for Vishay SUD45P03-10-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.