The SUD50N02-06-E3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 100W and a continuous drain current of 30A. The device features a drain to source breakdown voltage of 20V and a drain to source resistance of 6mR. It is packaged in a TO-252-3 package and is RoHS compliant.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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