N-channel power MOSFET with 30V drain-source voltage and 30A continuous drain current. Features low 5.7mΩ drain-source on-resistance and 10W power dissipation. Operates from -55°C to 175°C, packaged in a surface-mount DPAK with RoHS compliance. Includes 3.8nF input capacitance and fast switching times with 9ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power10W
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Technical Specifications
Vishay SUD50N03-06AP-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
30A
Drain to Source Resistance
5.7mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
5.7mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
3.8nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
10W
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
10W
Radiation Hardening
No
Rds On Max
5.7mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
26ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-06AP-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-06AP-E3 to view detailed technical specifications.
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