N-channel power MOSFET with 30V drain-source voltage and 30A continuous drain current. Features low 5.7mΩ drain-source on-resistance and 10W power dissipation. Operates from -55°C to 175°C, packaged in a surface-mount DPAK with RoHS compliance. Includes 3.8nF input capacitance and fast switching times with 9ns fall time.
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Vishay SUD50N03-06AP-E3 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.7mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 3.8nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 10W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 26ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
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