N-channel power MOSFET featuring 30V drain-source breakdown voltage and 84A continuous drain current. Offers a low 6.5mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting in a DPAK package, this RoHS compliant component boasts a maximum power dissipation of 88W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay and 10ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
Vishay SUD50N03-06P-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
84A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.5MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.094inch
Input Capacitance
3.1nF
Lead Free
Lead Free
Length
0.264inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
8.3W
Rds On Max
6.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
12ns
Width
0.245inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-06P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-06P-E3 to view detailed technical specifications.
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