N-channel power MOSFET featuring 30V drain-source voltage and 63A continuous drain current. Offers low 9.5mΩ drain-source on-resistance and 65.2W maximum power dissipation. Designed for surface mounting in a TO-252 package, this component boasts fast switching speeds with 9ns turn-on delay and 8ns fall time. Operates across a wide temperature range from -55°C to 175°C, with lead-free and RoHS compliant construction.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N03-09P-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
63A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9.5MR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.2nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
65.2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
22ns
Turn-On Delay Time
9ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-09P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-09P-E3 to view detailed technical specifications.
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