N-channel power MOSFET featuring 30V drain-source voltage and 63A continuous drain current. Offers low 9.5mΩ drain-source on-resistance and 65.2W maximum power dissipation. Designed for surface mounting in a TO-252 package, this component boasts fast switching speeds with 9ns turn-on delay and 8ns fall time. Operates across a wide temperature range from -55°C to 175°C, with lead-free and RoHS compliant construction.
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Vishay SUD50N03-09P-E3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 63A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5MR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
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