Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Vishay SUD50N03-10P technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| RoHS Compliant | No |
| Series | SUD |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Weight | 0.01164oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
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