Vishay
SUD50N03-11-E3
TRANSISTOR 50 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power7.5W
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Technical Specifications
Vishay SUD50N03-11-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.13nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
7.5W
Radiation Hardening
No
Rds On Max
11mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-11-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-11-E3 to view detailed technical specifications.
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