The SUD50N03-11-E3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of 30V. The device features a maximum power dissipation of 62.5W and a gate to source voltage of 20V. It is packaged in a TO-252-3 package and is RoHS compliant.
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Vishay SUD50N03-11-E3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.13nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 7.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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