Vishay
SUD50N03-12P-E3
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N03-12P-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
17.5A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.6nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
46.8W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
12mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
20ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-12P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-12P-E3 to view detailed technical specifications.
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