Power Field-Effect Transistor, 15A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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Vishay SUD50N03-16P-E3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.15nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 16mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| RoHS | Compliant |
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