P-channel Power MOSFET featuring 40V drain-source voltage and 50A continuous drain current. This single-element device utilizes TrenchFET process technology and is housed in a 3-pin DPAK (TO-252AA) surface-mount package with a maximum power dissipation of 2500mW. Key specifications include a maximum drain-source on-resistance of 8.1 mOhm at 10V and a typical gate charge of 106 nC at 10V. The package dimensions are 6.73mm (L) x 6.22mm (W) x 2.38mm (H), with a pin pitch of 2.28mm.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SUD50N04-08-GE3 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.38(Max)
Seated Plane Height (mm)
2.52(Max)
Pin Pitch (mm)
2.28
Package Weight (g)
0.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
8.1@10VmOhm
Typical Gate Charge @ Vgs
106@10V|[email protected]nC
Typical Gate Charge @ 10V
106nC
Typical Input Capacitance @ Vds
5380@20VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Vishay SUD50N04-08-GE3 Datasheet
Download the complete datasheet for Vishay SUD50N04-08-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.