P-channel Power MOSFET featuring 40V drain-source voltage and 50A continuous drain current. This single-element device utilizes TrenchFET process technology and is housed in a 3-pin DPAK (TO-252AA) surface-mount package with a maximum power dissipation of 2500mW. Key specifications include a maximum drain-source on-resistance of 8.1 mOhm at 10V and a typical gate charge of 106 nC at 10V. The package dimensions are 6.73mm (L) x 6.22mm (W) x 2.38mm (H), with a pin pitch of 2.28mm.
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Vishay SUD50N04-08-GE3 technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 8.1@10VmOhm |
| Typical Gate Charge @ Vgs | 106@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 106nC |
| Typical Input Capacitance @ Vds | 5380@20VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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