N-channel power MOSFET with 60V drain-source breakdown voltage and 7.8mΩ Rds(on) at 10V gate-source voltage. Features a continuous drain current of 93A and a maximum power dissipation of 136W. This surface-mount device is housed in a DPAK package, suitable for high-power applications. It offers fast switching speeds with turn-on delay time of 28ns and fall time of 10ns. Operating temperature range is -55°C to 175°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power136W
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Technical Specifications
Vishay SUD50N06-08H-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
93A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
7.8mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.094inch
Input Capacitance
7nF
Length
0.264inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
136W
Rds On Max
7.8mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
28ns
Width
0.245inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N06-08H-E3 Datasheet
Download the complete datasheet for Vishay SUD50N06-08H-E3 to view detailed technical specifications.
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