P-channel power MOSFET for general-purpose applications. Features a -40V drain-source voltage and -50A continuous drain current. Offers low on-resistance of 6.7mΩ (typical) and 8.1mΩ (max). Packaged in a TO-252-3 surface-mount case, this device boasts a 73.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. RoHS compliant and halogen-free.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SUD50P04-08-GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | -50A |
| Drain to Source Resistance | 6.7mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 8.1mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.38nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.1mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50P04-08-GE3 Datasheet
Download the complete datasheet for Vishay SUD50P04-08-GE3 to view detailed technical specifications.
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