P-channel power MOSFET for general-purpose applications. Features a -40V drain-source voltage and -50A continuous drain current. Offers low on-resistance of 6.7mΩ (typical) and 8.1mΩ (max). Packaged in a TO-252-3 surface-mount case, this device boasts a 73.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. RoHS compliant and halogen-free.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SUD50P04-08-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
-50A
Drain to Source Resistance
6.7mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
8.1mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.38nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
73.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
8.1mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
70ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50P04-08-GE3 Datasheet
Download the complete datasheet for Vishay SUD50P04-08-GE3 to view detailed technical specifications.
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